50 nm Silicon-On-Insulator N-MOSFET Featuring Multiple Stressors: Silicon-Carbon Source/Drain Regions and Tensile Stress Silicon Nitride Liner

Author

Ang, Kah-Wee ; Chui, King-Jien ; Chin, Hock-Chun ; Foo, Yong-Lim ; Du, Anyan ; Deng, Wei ; Li, Ming-Fu ; Samudra, Ganesh ; Balasubramanian, N. ; Yeo, Yee-Chia

Author_Institution

Dept. of Electr. & Comput. Eng., Singapore Nat. Univ.

fYear

0

fDate

0-0 0

Firstpage

66

Lastpage

67

Abstract

A novel n-channel strained SOI transistor featuring silicon-carbon (SiC) source/drain (S/D) regions and tensile stress silicon nitride (SiN) liner is demonstrated for the first time. Drive current I_Dsat enhancement contributed by the dual stressors is found to be additive and a significant increase in I_Dsat of 55% is observed at a gate length L_G of 50 nm. In addition, we report the dependence of drive current on channel orientation, with highest I _Dsat observed for strained n-MOSFETs with the |010| channel direction. A study of the carrier transport characteristics indicate reduced channel back-scattering and enhanced carrier injection velocity due to the strain effects

Keywords

MOSFET; nanotechnology; silicon compounds; silicon-on-insulator; wide band gap semiconductors; 50 nm; N-MOSFET; SiC; SiN; carrier injection velocity; carrier transport characteristics; channel backscattering; channel orientation; multiple stressors; silicon-on-insulator; source/drain regions; strain effects; tensile stress liner; Capacitive sensors; Epitaxial growth; Implants; MOSFET circuits; Silicon carbide; Silicon compounds; Silicon on insulator technology; Tensile strain; Tensile stress; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

1-4244-0005-8

Type

conf

DOI

10.1109/VLSIT.2006.1705219

Filename

1705219