TiN/HfSiOx Gate Stack Multi-Channel Field Effect Transistor (McFET) for Sub 55nm SRAM Application

Author

Kim, Sung Min ; Yoon, Eun Jung ; Kim, Min Sang ; Suk, Sung Dae ; Li, Ming ; Jun, Lian ; Oh, Chang Woo ; Yeo, Kyoung Hwan ; Kim, Sung Hwan ; Lee, Sung Young ; Choi, Yong Lack ; Kim, Na-young ; Yeoh, Yun-young ; Park, Hong-Bae ; Kim, Chul Sung ; Kim, Hye-Mi

Author_Institution

Semicond. R&D Center, Samsung Electron. Co., Yongin

fYear

0

fDate

0-0 0

Firstpage

72

Lastpage

73

Abstract

For the first time, titanium-nitride (TiN) single metal gate and high-k hafnium-silicate (HfSiO_x) gate dielectric have been successfully integrated in 55nm McFET SRAM cell. The use of HfSiO_x gate dielectric, not only reduces gate leakage current but also improves I_ON/I_OFF ratio of PFET to 10⁸. Using local fin implantation (LFI) scheme, junction capacitance is reduced by 13% and junction breakdown voltage is increased by 1.4V

Keywords

MOSFET; SRAM chips; dielectric materials; hafnium compounds; high-k dielectric thin films; leakage currents; low-power electronics; nanotechnology; silicon compounds; tin compounds; 55 nm; McFET SRAM cell; TiN-HfSiO; high-k dielectric; leakage current; local fin implantation scheme; CMOS technology; Electrodes; FETs; Fabrication; High K dielectric materials; High-K gate dielectrics; Leakage current; Random access memory; Tin; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

1-4244-0005-8

Type

conf

DOI

10.1109/VLSIT.2006.1705222

Filename

1705222