Title :
Highly Reliable and Scalable Tungsten Polymetal Gate Process for Memory Devices Using Low-Temperature Plasma Selective Gate Reoxidation
Author :
Lim, Kwan-Yong ; Sung, Min-Gyu ; Cho, Heung-Jae ; Kim, Yong Soo ; Jang, Se-Aug ; Oh, Jae-Geun ; Lee, Seung Ryong ; Kim, Kwangok ; Lee, Pil-Soo ; Chun, Yun-Seok ; Yang, Hong-Seon ; Kwak, Noh-Jung ; Sohn, Hyun-Chul ; Kim, Jin-Woong ; Park, Sung-Wook
Author_Institution :
R&D Div., Hynix Semicond. Inc., Kyoungki
Abstract :
We applied a very low-temperature plasma-type selective gate reoxidation process to W/poly-Si gate for suppression of abnormal oxidation of a low contact resistive WSix/WN diffusion barrier. The device with the plasma selective gate reoxidation showed superior gate oxide reliability and improved stress immunity of transistor compared to the thermally selective gate reoxidized devices
Keywords :
cryogenic electronics; diffusion; integrated memory circuits; oxidation; plasma materials processing; tungsten; W; abnormal oxidation suppression; diffusion barrier; gate oxide reliability; low-temperature plasma selective gate reoxidation; memory devices; thermally selective gate reoxidized devices; transistor stress immunity; tungsten polymetal gate process; Delay; Electric resistance; MOS capacitors; Oxidation; Plasma devices; Plasma properties; Plasma temperature; Thermal degradation; Thermal stresses; Tungsten;
Conference_Titel :
VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0005-8
DOI :
10.1109/VLSIT.2006.1705223
