• DocumentCode
    262518
  • Title

    A 460MHz at 397mV, 2.6GHz at 1.3V, 32b VLIW DSP, embedding FMAX tracking

  • Author

    Wilson, Robin ; Beigne, Edith ; Flatresse, Philippe ; Valentian, Alexandre ; Abouzeid, Fady ; Benoist, Thomas ; Bernard, Christian ; Bernard, Sebastien ; Billoint, Olivier ; Clerc, Sylvain ; Giraud, Bastien ; Grover, Anuj ; Le Coz, Julien ; Miro Panades,

  • Author_Institution
    STMicroelectron., Crolles, France
  • fYear
    2014
  • fDate
    9-13 Feb. 2014
  • Firstpage
    452
  • Lastpage
    453
  • Abstract
    Wide-voltage-range-operation DSPs bring more versatility to achieve high energy efficiency in mobile applications to increase signal processing complexity and handle a large range of performance specifications. This paper describes a 32b DSP fabricated in 28nm UTBB FDSOI technology [1]. Body-bias-voltage (VBB) scaling from 0V up to ±2V (Pwell/Nwell) decreases the DSP core VDDMIN to 397mV and increases clock frequency by +400% at 500mV and +114% at 1.3V. In addition to technology gains, dedicated design features are included to increase frequency over the full VDD range, considering parameter variations. As depicted in Fig. 27.1.1, the 32b datapath VLIW DSP is organized around a MAC dedicated to complex arithmetic and two dedicated operators: a cordic/divider and a compare/select. Data enters the circuit through a serial interface and code is run from a 64×32b register file. It has been shown in [1] that a given operating frequency can be achieved at a lower VDD in UTBB FDSOI compared to bulk by applying a forward-body bias. An additional design step is achieved in this work by (1) increasing the frequency at low VDD thanks to a specific selection and design of standard cells with respect to power vs. performance and (2) dynamically tracking the maximum frequency to cope with variations.
  • Keywords
    digital signal processing chips; multiprocessing systems; silicon-on-insulator; FMAX tracking; UTBB FDSOI technology; VLIW DSP; body-bias-voltage scaling; compare/select; complex arithmetic; cordic/divider; dedicated operator; energy efficiency; forward-body bias; mobile application; signal processing complexity; size 28 nm; voltage 1.3 V; voltage 500 mV; wide-voltage-range-operation; Benchmark testing; Digital signal processing; Energy efficiency; Energy measurement; Frequency measurement; Monitoring; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2014 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    978-1-4799-0918-6
  • Type

    conf

  • DOI
    10.1109/ISSCC.2014.6757509
  • Filename
    6757509