Title :
High Performance Micro-Crystallized TaN/SrTiO3/TaN Capacitors for Analog and RF Applications
Author :
Chiang, K.C. ; Huang, C.C. ; Chin, Albert ; Chen, W.J. ; Kao, H.L. ; Hong, M. ; Kwo, J.
Author_Institution :
Dept. of EE, National Chiao-Tung Univ., Hsinchu
Abstract :
Using micro-crystallized high-k SrTiO3 on N+-treated TaN, very high 28 fF/mum2 capacitance density, low voltage linearity (alpha) of 92 ppm/V2 and small leakage of 3times10-8 A/cm2 at 2V are beyond ITRS spec of analog capacitor at year 2018. Further improving to 44 fF/mum2 and low alpha of 54 ppm/V2 are obtained for higher speed analog/RF ICs at 2 GHz
Keywords :
UHF integrated circuits; analogue integrated circuits; capacitors; high-k dielectric thin films; microwave integrated circuits; strontium compounds; tantalum compounds; titanium compounds; 2 GHz; 2 V; RF application; RFIC; TaN-SrTiO3-TaN; analog application; analog capacitor; high capacitance density; low voltage linearity; micro-crystallized capacitor; small leakage current; Capacitance; Capacitance-voltage characteristics; Density measurement; Electrodes; Leakage current; MIM capacitors; Materials science and technology; Plasma devices; Radio frequency; Random access memory;
Conference_Titel :
VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0005-8
DOI :
10.1109/VLSIT.2006.1705237
