Title :
Impact of HfSiON Induced Flicker Noise on Scaling of Future Mixed-Signal CMOS
Author :
Yasuda, Yuri ; Lin, Chung-Hsun ; Liu, Tsu-Jae King ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA
Abstract :
It is shown for the first time that HfSiON gate dielectric thickness has a strong impact on the flicker (1/f) noise of devices with Lg < 1mum. We have developed a simple model for both gate length (Lg) and HfSiON thickness dependences of N-FET flicker noise, based on excess traps at the gate-edges. P-FET noise does not exhibit such strong dependences. Scaling of future analog devices with high-k gate stack may be limited by noise considerations
Keywords :
1/f noise; CMOS integrated circuits; flicker noise; hafnium compounds; mixed analogue-digital integrated circuits; silicon compounds; 1/f noise; HfSiON; N-FET; P-FET; analog devices scaling; excess traps; gate dielectric thickness; high-k gate stack; induced flicker noise; mixed-signal CMOS; 1f noise; CMOS technology; Circuit noise; Dielectric devices; Fluctuations; High K dielectric materials; High-K gate dielectrics; Logic devices; Noise measurement; Semiconductor device modeling;
Conference_Titel :
VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0005-8
DOI :
10.1109/VLSIT.2006.1705239
