Direct Non-Contact Electrical Measurement of Low-k Damage in Patterned Low-k Films by a Near-Field Scanned Microwave Probe

Author

Tsai, J.S. ; Hsu, J.W. ; Shieh, J.H. ; Jang, S.M. ; Liang, M.S.

Author_Institution

Adv. Module Technol. Div., Taiwan Semicond. Manuf. Co. Ltd., Hsinchu

fYear

0

fDate

0-0 0

Firstpage

112

Lastpage

113

Abstract

We demonstrate a near-field scanned microwave probe and specific test keys for direct non-contact electrical measurement of low-k dielectric constant and damage after deposition, during trench/via processing, and after metallization. This work successfully defines the dielectric constant and the thickness of the damaged layer in patterned low-k films, and is the first demonstration of a metrology for electrical in-line measurements of low-k damage. Furthermore, we point out the integration issue of porous low-k by using this novel technique

Keywords

electric variables measurement; integrated circuit metallisation; integrated circuit testing; low-k dielectric thin films; microwave measurement; porous materials; damage after deposition; low-k damage; low-k dielectric constant; near-field scanned microwave probe; noncontact electrical measurement; patterned low-k films; porous low-k device; specific test keys; trench processing; via processing; Capacitance; Capacitors; Dielectric constant; Dielectric measurements; Electric variables measurement; Microwave measurements; Monitoring; Probes; Resonant frequency; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

1-4244-0005-8

Type

conf

DOI

10.1109/VLSIT.2006.1705242

Filename

1705242