A 90nm Phase Change Memory Technology for Stand-Alone Non-Volatile Memory Applications

Author

Pellizzer, F. ; Benvenuti, A. ; Gleixner, B. ; Kim, Y. ; Johnson, B. ; Magistretti, M. ; Marangon, T. ; Pirovano, A. ; Bez, R. ; Atwood, G.

Author_Institution

STMicroelectronics, Milan

fYear

0

fDate

0-0 0

Firstpage

122

Lastpage

123

Abstract

A 90nm technology node phase change memory (PCM) process, based on a chalcogenide material storage element with a vertical pnp bipolar junction transistor (BJT) selector device, is presented. The small cell area of 12F², the good electrical results, and the intrinsic reliability demonstrate the viability of the PCM cell concept. Programming currents as low as 400muA, very good distributional data achieved on multi-megabit arrays for programming (set and reset), endurance, and retention, demonstrate the suitability of PCM for fabrication of a high density array at 90nm

Keywords

bipolar transistors; phase change materials; random-access storage; 90 nm; 90nm technology node; BJT selector device; PCM cell concept; PCM process; chalcogenide material storage element; high density array; multi-megabit arrays; nonvolatile memory; phase change memory technology; vertical pnp bipolar junction transistor; Costs; Educational institutions; Fabrication; Flash memory; Material storage; Nonvolatile memory; Phase change materials; Phase change memory; Scalability; Tungsten;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

1-4244-0005-8

Type

conf

DOI

10.1109/VLSIT.2006.1705247

Filename

1705247