Title :
Superconducting-gate silicon field effect transistors
Author :
Yang, Cary Y. ; Qiao, Jianmin ; Pagaduan, Felino E.
Author_Institution :
Microelectron. Lab., Santa Clara Univ., CA, USA
Abstract :
A silicon field-effect transistor consisting of a superconducting yttrium barium copper oxide gate, an yttria-stabilized zirconia insulator layer, and p-type silicon substrate with phosphorous-implanted source/drain has been fabricated. The drain current-voltage characteristics at room temperature resemble results measured from a metal-oxide silicon field effect transistor. The key to this similarity lies in the existence of the interfacial silicon oxide layer between the gate insulator/buffer and silicon
Keywords :
barium compounds; elemental semiconductors; high-temperature superconductors; insulated gate field effect transistors; silicon; superconducting thin films; superconducting transistors; yttrium compounds; P-implanted source/drain; Si; Si:P; YBaCuO-Y2O3ZrO2-Si; drain current-voltage characteristics; field effect transistors; p-type Si substrate; room temperature characteristics; superconducting YBCO gate; superconducting-gate Si FET; yttria-stabilized zirconia insulator layer; Contacts; FETs; Interface states; MOSFET circuits; Reproducibility of results; Silicon; Superconducting epitaxial layers; Temperature; Voltage; Yttrium barium copper oxide;
Conference_Titel :
Electron Devices Meeting, 1994.Proceedings., 1994 IEEE Hong Kong
Print_ISBN :
0-7803-2086-7
DOI :
10.1109/HKEDM.1994.395135
