DocumentCode
2625946
Title
Calculation of I-V curves of a GaAs MESFET with nonuniform channel doping by means of numerical integration
Author
Weng, Tung H.
Author_Institution
Sch. of Eng. & Comput. Sci., Oakland Univ., Rochester, MI, USA
fYear
1994
fDate
34533
Firstpage
28
Lastpage
31
Abstract
A numerical method for calculating the I-V characteristics of a GaAs MESFET with ion implanted layer is presented. This method is based on the finding of the channel conductance as a function of the voltage drop across the metal-semiconductor junction which in turn is related to the depletion depth of the active layer through the solution of Poisson´s equation
Keywords
III-V semiconductors; Schottky gate field effect transistors; doping profiles; gallium arsenide; integration; ion implantation; numerical analysis; semiconductor device models; GaAs; GaAs MESFET; I-V characteristics; I-V curves; Poisson equation; channel conductance; depletion depth; ion implanted layer; metal-semiconductor junction; nonuniform channel doping; numerical integration; voltage drop; Doping profiles; Electrons; Gallium arsenide; Implants; MESFETs; Permittivity; Poisson equations; Semiconductor device doping; Substrates; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1994.Proceedings., 1994 IEEE Hong Kong
Print_ISBN
0-7803-2086-7
Type
conf
DOI
10.1109/HKEDM.1994.395136
Filename
395136
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