The Features and Characteristics of 5-mega CMOS Image Sensor with Topologically Unique 1.7/spl m/m~1.7/spl mu/m Pixels

Author

Lee, Seok-Ha ; Moon, Chang-Rok ; Paik, Kee-Hyun ; Hwang, Sung-Ho ; Shin, Jong-Cheol ; Jung, Jongwan ; Lee, Kangbok ; Noh, Hyunpil ; Lee, Duckhyung ; Kim, Kinam

Author_Institution

Memory Div., Samsung Electron. Co., Gyeonggi-Do

fYear

0

fDate

0-0 0

Firstpage

142

Lastpage

143

Abstract

CMOS image sensor (CIS) of 5-mega pixel density has been successfully developed with the smallest pixels (1.7mumtimes1.7mum) ever made. The newly introduced unique pixel architecture brought excellent optical symmetry and high electron capacity. Degradation of sensitivity and cross-talk can be suppressed with the optimization of the optical structure through proper color filter material and reduction of total aspect ratio (vertical stack height/pixel pitch) with Cu back end of line (BEOL)

Keywords

CMOS image sensors; copper; crosstalk; optical filters; 1.7 micron; 5 Mpixel; BEOL; CMOS image sensor; Cu; aspect ratio reduction; color filter material; high electron capacity; optical structure optimization; optical symmetry; unique pixel architecture; CMOS image sensors; Computational Intelligence Society; Electron optics; Moon; Optical crosstalk; Optical distortion; Optical filters; Optical saturation; Optical sensors; Pixel;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

1-4244-0005-8

Type

conf

DOI

10.1109/VLSIT.2006.1705257

Filename

1705257