DocumentCode :
2626020
Title :
A methodology for converting polygon based standard cell from bulk CMOS to SOI
Author :
Wu, Kevin Y. ; Chan, Philip C.H.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
fYear :
1994
fDate :
34533
Firstpage :
8
Lastpage :
11
Abstract :
We have developed a methodology to convert polygon-based full-custom bulk CMOS cells to SOI/CMOS. This methodology is implemented using the Cadence Design Systems Virtuoso environment. We have demonstrated the methodology by converting the Orbit Scalable CMOSN standard cells. The results are quite good for small cells. However, for complex and highly optimized cells, this methodology may lead to a slight increase in the cell area. We have also demonstrated that this methodology can also be applied to further reduce the cell areas if the SOI/CMOS cells are resigned to take advantage of the low-power and high-performance capability of SOI/CMOS
Keywords :
CMOS integrated circuits; application specific integrated circuits; cellular arrays; circuit layout CAD; integrated circuit layout; silicon-on-insulator; Cadence Design Systems; Orbit Scalable CMOSN standard cells; SOI/CMOS cells; Virtuoso environment; conversion technique; full-custom bulk CMOS cells; polygon based standard cell; CMOS process; CMOS technology; Fabrication; Layout; Libraries; Silicon on insulator technology; Substrates; Thin film circuits; Transistors; Ultra large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1994.Proceedings., 1994 IEEE Hong Kong
Print_ISBN :
0-7803-2086-7
Type :
conf
DOI :
10.1109/HKEDM.1994.395140
Filename :
395140
Link To Document :
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