Title :
Strained-Si, Relaxed-Ge or Strained-(Si)Ge for Future Nanoscale p-MOSFETs?
Author :
Krishnamohan, Tejas ; Kim, Donghyun ; Jungemann, Christoph ; Nishi, Yoshio ; Saraswat, Krishna C.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., CA
Abstract :
For the first time, the tradeoffs between drive current (Ion ), intrinsic delay (tau), band-to-band tunneling (BTBT) leakage and short channel effects (SCE) have been systematically compared in futuristic high mobility channel materials, like strained-Si (0-100%), strained-SiGe (0-100%) and relaxed-Ge. The optimal channel materials and device structures for nanoscale p-MOSFETs are discussed through detailed BTBT (including band structure and quantum effects), full-band Monte-Carlo, 1-D Poisson-Schrodinger simulations and experiments on ultra-thin (<10nm) SOI FETs
Keywords :
Ge-Si alloys; MOSFET; Monte Carlo methods; band structure; nanotechnology; semiconductor device models; silicon-on-insulator; stochastic processes; tunnelling; Ge; Monte-Carlo method; Poisson-Schrodinger simulations; Si; SiGe; band structure; band-to-band tunneling leakage; channel materials; device structure; nanoscale p-MOSFET; quantum effects; short channel effects; ultra-thin SOI FET; Capacitive sensors; Delay effects; FETs; Geometry; MOSFET circuits; Nanoscale devices; Nanostructures; Photonic band gap; Silicon; Tunneling;
Conference_Titel :
VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0005-8
DOI :
10.1109/VLSIT.2006.1705258
