Title :
Origin of Drivability Enhancement in Scaled pMOSFETs with 45/spl deg/ Rotated <100> Channels
Author :
Saito, S. ; Hisamoto, D. ; Kimura, Yuichi ; Sugii, N. ; Tsuchiya, R. ; Torii, K. ; Kimur, S.
Author_Institution :
Central Res. Lab., Hitachi, Ltd., Tokyo
Abstract :
We have elucidated the mechanism of the drive current enhancement in <100> channel pMOSFETs on (100) substrate. In spite of the huge anisotropic effective mass, the long channel mobility (mueff) of <100> is identical to that of <110>, while it is enhanced when L and W are scaled. We found evidence that the origin is process induced stress, and the mueff enhancement is theoretically supported by the reduction of the average effective mass in a diffusive transport regime. We propose that a combination of <100> channel and biaxial compressive stress is effective to enhance mueff
Keywords :
MOSFET; carrier mobility; effective mass; stress relaxation; substrates; surface diffusion; (100) substrate; biaxial compressive stress; channel compressive stress; channel mobility enhancement; diffusive transport regime; drivability enhancement; drive current enhancement; pMOSFET; process induced stress; Anisotropic magnetoresistance; Capacitive sensors; Compressive stress; Conductivity; Electrical capacitance tomography; Electron mobility; MOSFETs; Phonons; Scattering; Temperature;
Conference_Titel :
VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0005-8
DOI :
10.1109/VLSIT.2006.1705261
