Title :
A silicon pixel readout ASIC in CMOS 0.13 μm for the PANDA microvertex detector
Author :
Calvo, D. ; De Remigis, P. ; Kugathasan, T. ; Mazza, G. ; Mignone, M. ; Rivetti, A. ; Salerno, S. ; Stockmanns, T. ; Wheadon, R.
Author_Institution :
Istituto Nazionale di Fisica Nucleare sezione di Torino, 10125, Italy
Abstract :
The requirements for the PANDA Micro Vertex Detector in terms of track density and absence of a trigger signal lead to the need of a custom solution for the electronic readout of the silicon pixel detectors. A reduced scale prototype with two 128 cells and two 32 cells columns has been designed in a CMOS 0.13 μm technology and successfully tested. The ASIC measures the 2-D position, the hit arrival time and the charge released via a Time over Threshold technique.
Keywords :
Application specific integrated circuits; CMOS technology; Charge measurement; Current measurement; Detectors; Position measurement; Prototypes; Silicon; Testing; Time measurement;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2008. NSS '08. IEEE
Conference_Location :
Dresden, Germany
Print_ISBN :
978-1-4244-2714-7
Electronic_ISBN :
1095-7863
DOI :
10.1109/NSSMIC.2008.4774980