Author :
Lenoble, D. ; Anil, K.G. ; De Keersgieter, A. ; Eybens, P. ; Collaert, N. ; Rooyackers, R. ; Brus, S. ; Zimmerman, P. ; Goodwin, M. ; Vanhaeren, D. ; Vandervorst, W. ; Radovanov, S. ; Godet, L. ; Cardinaud, C. ; Biesemans, S. ; Skotnicki, T. ; Jurczak, M.
Abstract :
For the first time, scaled PMOS MUGFET devices with TiCN/HfO2 gate stack is doped with specific pulsed plasma doping processes. This paper first highlights the key benefit brought by conformal source/drain extensions, demonstrates how pulsed plasma doping process can be tuned to conformal dope very dense fin structures and finally shows that high performance (+24% vs. ion implant reference) multi-gate pMOS device (720 muA/mum @ Ioff 20nA/mum, at Vds = -1.2V) is achieved with extensions formed by optimized PLAD process
Keywords :
MOSFET; ion implantation; plasma materials processing; semiconductor doping; -1.2 V; PMOS MUGFET; TiCN-HfO2; conformal doping; fin structures; gate stack; ion implantation; multigate pMOS device; optimized PLAD process; pulsed plasma doping; source-drain extensions; Annealing; Cathodes; Doping; Hafnium oxide; Implants; Ion beams; Plasma density; Plasma devices; Plasma immersion ion implantation; Plasma sources;
