Session 13 overview: Advanced embedded memory: Memory subcommittee

Embedded memory continues to be a critical technology enabler for a wide range of applications from high-performance computing to mobile applications. This year´s conference highlights significant increases in on-chip capacity and bandwidth along with a continued drive towards advanced technology nodes while maintaining a strong focus on low-power operation. A 1Gb embedded DRAM using 22nm tri-gate CMOS logic technology is presented to meet the demands of bandwidth-intense applications. Papers in 14nm FinFET, 16nm FinFET, and 20nm planar technologies demonstrate state-of-the-art read/write assist techniques in order to challenge VMIN limitations. Various aspects of power and performance optimizations are highlighted in the session, including leakage power, dynamic power, latency, and throughput.