Title :
Session 19 overview: Nonvolatile memory solutions: Memory subcommittee
Author :
Han, Jin-Man ; Yamauchi, Tadaaki
Author_Institution :
Samsung, Hwaseong, Korea
Abstract :
Strong market demands of diverse non-volatile memory technologies show continuing increase in density, reliability, and performance. This year the leading edge process node for NAND Flash is scaled down to the minimum feature size of 16nm, and three-dimensional vertical NAND has been demonstrated. In addition, Flash controllers contribute to the higher reliability and performance on such advanced node. Emerging memories such as Resistive RAM (ReRAM) are continuing to show significant performance progress.
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2014 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
978-1-4799-0918-6
DOI :
10.1109/ISSCC.2014.6757565
