Unique Ultra Shallow Junction Scheme with Conventional Activation Process

Author

Tsai, C.H. ; Lan, B.C. ; Lin, Y.H. ; Chiang, W.T. ; Chang, T.Y. ; Liu, P.W. ; Pan, J.W. ; Liu, Y.C. ; Tsai, J.L. ; Chen, T.F. ; Tsai, C.T.

Author_Institution

Central R&D Div., United Microelectron. Corp., Hsinchu

fYear

0

fDate

0-0 0

Firstpage

188

Lastpage

189

Abstract

A unique ultra shallow junction scheme featured with integrating diffusion barrier into eSiGe:B strained pMOSFETs has been demonstrated. Embedded diffusion barrier (EDB) drastically suppresses boron out-diffusion from subsequent thermal treatment, thus resulting in superior short channel control. This approach enables the formation of ultra shallow junction, over 30% junction depth reduction, while simultaneously maintaining low extension resistance using conventional activation process only. Furthermore, eSiGe:B with embedded diffusion barrier (eSiGe:B w/ EDB) scheme can still retain local stress and enhanced pMOSFETs current. Device performance and barrier layer characteristics of eSiGe:B w/ EDB scheme are also reported in this work

Keywords

Ge-Si alloys; MOSFET; boron; diffusion barriers; semiconductor junctions; EDB; SiGe:B; activation process; barrier layer characteristics; embedded diffusion barrier; junction depth reduction; low extension resistance; strained pMOSFET; superior short channel control; thermal treatment; ultra shallow junction scheme; Annealing; Boron; CMOS technology; CMOSFETs; Capacitive sensors; Epitaxial growth; Etching; Germanium silicon alloys; MOSFETs; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

1-4244-0005-8

Type

conf

DOI

10.1109/VLSIT.2006.1705280

Filename

1705280