Title :
A 76 x 77mm/sup 2/, 16.85 Million Pixel CMOS APS Image Sensor
Author :
Ay, Suat U. ; Fossum, Eric R.
Author_Institution :
Micron Technol., Inc., Pasadena, CA
Abstract :
A 16.85 million pixel (4,096 times 4,114), single die (76mm times 77mm) CMOS active pixel sensor (APS) image sensor with 1.35Me- pixel well-depth was designed, fabricated, and tested in a 0.5mum CMOS process with a stitching option. A hybrid photodiode-photogate (HPDPG) APS pixel technology was developed. Pixel pitch was 18mum. The developed image sensor was the world´s largest single-die CMOS image sensor fabricated on a 6-inch silicon wafer
Keywords :
CMOS image sensors; photodiodes; 16.85E6 pixel; 6 inch; APS pixel; CMOS image sensor; hybrid photodiode-photogate; stitching option; CMOS image sensors; CMOS process; CMOS technology; Circuits; Decoding; Digital control; Fabrication; Image sensors; Pixel; Sensor arrays;
Conference_Titel :
VLSI Circuits, 2006. Digest of Technical Papers. 2006 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0006-6
DOI :
10.1109/VLSIC.2006.1705291
