• DocumentCode
    2626817
  • Title

    Recent Advances in Bulk Semiconductor Microwave Devices in Japan

  • Author

    Okoshi, T.

  • fYear
    1967
  • fDate
    8-11 May 1967
  • Firstpage
    150
  • Lastpage
    152
  • Abstract
    Recent achievements and state-of-the-art in the bulk semiconductor microwave devices in Japan will be described. The discussions will be limited to GaAs Gunn oscillators unless otherwise stated. Devices other than Gunn oscillators will be discussed in the final section.
  • Keywords
    Doping; Electrical resistance measurement; Fabrication; Frequency; Gallium arsenide; Gunn devices; Microwave devices; Microwave oscillators; National electric code; Noise measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1967 G-MTT International
  • Conference_Location
    Boston, MA, USA
  • Type

    conf

  • DOI
    10.1109/GMTT.1967.1122624
  • Filename
    1122624