DocumentCode
2626817
Title
Recent Advances in Bulk Semiconductor Microwave Devices in Japan
Author
Okoshi, T.
fYear
1967
fDate
8-11 May 1967
Firstpage
150
Lastpage
152
Abstract
Recent achievements and state-of-the-art in the bulk semiconductor microwave devices in Japan will be described. The discussions will be limited to GaAs Gunn oscillators unless otherwise stated. Devices other than Gunn oscillators will be discussed in the final section.
Keywords
Doping; Electrical resistance measurement; Fabrication; Frequency; Gallium arsenide; Gunn devices; Microwave devices; Microwave oscillators; National electric code; Noise measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1967 G-MTT International
Conference_Location
Boston, MA, USA
Type
conf
DOI
10.1109/GMTT.1967.1122624
Filename
1122624
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