Title :
The bipolar junction diode (BJD)-a new power diode concept
Author :
You, Budong ; Huang, Alex Q. ; Zhang, Bo ; Li, Yuxin
Author_Institution :
Dept. of Electr. & Comput. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
In this paper, a new power diode structure, called the bipolar junction diode (BJD) is proposed. It has superior dynamic characteristics over the conventional p-i-n diode. For the first time, it demonstrates the possibility to control the injection efficiency of the p+/n- junction of a p-i-n diode by varying the gain of a bipolar transistor which is merged with the junction and operated in a reverse active fashion. Both numerical simulations and experimental results are provided to illustrate this novel concept
Keywords :
numerical analysis; p-i-n diodes; p-n heterojunctions; power bipolar transistors; power semiconductor diodes; semiconductor device measurement; semiconductor device models; semiconductor device testing; bipolar junction power diode structure; bipolar transistor gain; dynamic characteristics; experimental results; injection efficiency; numerical simulations; p+/n- junction; p-i-n diode; reverse active fashion operation; Anodes; Bipolar transistors; Cathodes; Doping; Equivalent circuits; Leakage current; Numerical simulation; P-i-n diodes; PIN photodiodes; Schottky diodes;
Conference_Titel :
Power Electronics Congress, 1998. CIEP 98. VI IEEE International
Conference_Location :
Morelia
Print_ISBN :
0-7803-5006-5
DOI :
10.1109/CIEP.1998.750678
