DocumentCode
2627360
Title
Impact of Layout on 90nm CMOS Process Parameter Fluctuations
Author
Pang, Liang-Teck ; Nikolic, Borivoje
Author_Institution
California Univ., Berkeley, CA
fYear
0
fDate
0-0 0
Firstpage
69
Lastpage
70
Abstract
A test chip has been built to study the effects of layout on the delay and leakage of digital circuits in 90nm CMOS. The delay is characterized through the spread of ring oscillator frequencies and the transistor leakage is measured by using an on-chip ADC
Keywords
CMOS digital integrated circuits; integrated circuit layout; integrated circuit testing; leakage currents; 90 nm; CMOS process; analog digital converter; digital circuit delay; digital circuit leakage; ring oscillator frequencies; test chip layout; transistor leakage; CMOS process; Circuit testing; Delay effects; Fingers; Fluctuations; Frequency measurement; Leakage current; Ring oscillators; Semiconductor device measurement; Tiles;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Circuits, 2006. Digest of Technical Papers. 2006 Symposium on
Conference_Location
Honolulu, HI
Print_ISBN
1-4244-0006-6
Type
conf
DOI
10.1109/VLSIC.2006.1705316
Filename
1705316
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