• DocumentCode
    262746
  • Title

    Design, technology and yield in the post-moore era

  • Author

    Yeric, Greg

  • Author_Institution
    ARM, USA
  • fYear
    2014
  • fDate
    20-23 Oct. 2014
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Looking forward along the technology roadmap, we see a complex, shifting landscape in which to attempt to ramp yield. Optical lithography is not providing any direct scaling benefit, and the available workarounds such as multiple patterning and mix-and-match lithography techniques greatly complicate design-technology co-optimization (DTCO) and yield/cost understanding. The silicon FinFET will give way to nanowires and/or new channel materials, and eventually force the examination of entirely new transistor topologies. Interconnect R´s and C´s will upset the FET/wire balance and with it some of our accumulated design/yield understanding, and reliability will play an increasing role in the determination of final cost. This talk will examine these technology roadmap topics with a view toward technology bring-up.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Test Conference (ITC), 2014 IEEE International
  • Conference_Location
    Seattle, WA, USA
  • Type

    conf

  • DOI
    10.1109/TEST.2014.7035310
  • Filename
    7035310