DocumentCode :
262746
Title :
Design, technology and yield in the post-moore era
Author :
Yeric, Greg
Author_Institution :
ARM, USA
fYear :
2014
fDate :
20-23 Oct. 2014
Firstpage :
1
Lastpage :
1
Abstract :
Looking forward along the technology roadmap, we see a complex, shifting landscape in which to attempt to ramp yield. Optical lithography is not providing any direct scaling benefit, and the available workarounds such as multiple patterning and mix-and-match lithography techniques greatly complicate design-technology co-optimization (DTCO) and yield/cost understanding. The silicon FinFET will give way to nanowires and/or new channel materials, and eventually force the examination of entirely new transistor topologies. Interconnect R´s and C´s will upset the FET/wire balance and with it some of our accumulated design/yield understanding, and reliability will play an increasing role in the determination of final cost. This talk will examine these technology roadmap topics with a view toward technology bring-up.
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Test Conference (ITC), 2014 IEEE International
Conference_Location :
Seattle, WA, USA
Type :
conf
DOI :
10.1109/TEST.2014.7035310
Filename :
7035310
Link To Document :
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