DocumentCode
2627476
Title
A 300 nW, 12 ppm//spl deg/C Voltage Reference in a Digital 0.35 /spl mu/m CMOS Process
Author
De Vita, Giuseppe ; Iannaccone, Giuseppe ; Andreani, Pietro
Author_Institution
Dipt. di Ingegneria dell´´Informazione: Elettronica, Informatica, Telecomunicazioni, Universita di Pisa
fYear
0
fDate
0-0 0
Firstpage
81
Lastpage
82
Abstract
A voltage reference has been implemented in a standard 0.35 mum CMOS process. A temperature coefficient of 12 ppm/degC is achieved in virtue of a complete suppression of the temperature dependence of the carrier mobility. The line sensitivity is 0.46 %/V and the maximum supply current, measured at 80degC, is 130 nA. The PSSR at 100 Hz and 10 MHz is -59 dB and -52 dB, respectively
Keywords
CMOS digital integrated circuits; carrier mobility; reference circuits; 0.35 micron; 130 nA; 300 nW; 80 C; carrier mobility; digital CMOS process; temperature coefficient; temperature dependence; voltage reference; CMOS process; CMOS technology; Circuits; Current measurement; Current supplies; Energy consumption; MOSFETs; Temperature dependence; Temperature sensors; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Circuits, 2006. Digest of Technical Papers. 2006 Symposium on
Conference_Location
Honolulu, HI
Print_ISBN
1-4244-0006-6
Type
conf
DOI
10.1109/VLSIC.2006.1705322
Filename
1705322
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