DocumentCode
2627730
Title
The Impact of Random Telegraph Signals on the Scaling of Multilevel Flash Memories
Author
Kurata, H. ; Otsuga, K. ; Kotabe, A. ; Kajiyama, S. ; Osabe, T. ; Sasago, Y. ; Narumi, S. ; Tokami, K. ; Kamohara, S. ; Tsuchiya, O.
Author_Institution
Central Res. Lab., Hitachi, Ltd., Tokyo
fYear
0
fDate
0-0 0
Firstpage
112
Lastpage
113
Abstract
This paper describes for the first time the observation of the threshold voltage (Vth) fluctuation due to random telegraph signal (RTS) in flash memory. We acquired large-scale data of Vth fluctuation and confirm the existence of the tail bits generated by RTS. The amount of Vth broadening due to the tail bits becomes larger as the scaling advances, and reaches to more than 0.3 V in 45-nm node. Thus the RTS becomes prominent issue for the design of multilevel flash memory in 45-nm node and beyond
Keywords
flash memories; integrated circuit design; memory architecture; 45 nm; multilevel flash memories; random telegraph signals; tail bits; threshold voltage fluctuation; CMOS technology; Flash memory; Flash memory cells; Fluctuations; Laboratories; Large-scale systems; Signal design; Tail; Telegraphy; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Circuits, 2006. Digest of Technical Papers. 2006 Symposium on
Conference_Location
Honolulu, HI
Print_ISBN
1-4244-0006-6
Type
conf
DOI
10.1109/VLSIC.2006.1705335
Filename
1705335
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