Title :
A Novel Program and Read Architecture for Contact-Less Virtual Ground NOR Flash Memory for High Density Application
Author :
Ito, Nobuhiko ; Yamauchi, Yoshimitsu ; Ueda, Naoki ; Yamamoto, Kaoru ; Sugita, Yasuhiro ; Mineyama, Takitsugu ; Ishihama, Akira ; Moritani, Kazuhiro
Author_Institution :
Adv. Technol. Dev. Labs., Sharp Corp., Nara
Abstract :
We have successfully developed multilevel (MLC) contact-less virtual ground array (VGA-NOR) flash memory. Sequential program from the source side edge cell of each segment and 32cells unit program with data buffer enable to cancel the Vt interference. Sense amplifier (SA) assist equalize-sensing (SAES) is implemented for high accuracy sensing operation
Keywords :
NOR circuits; buffer circuits; flash memories; sequential circuits; data buffer; multilevel contact-less flash memory; program architecture; read architecture; sense amplifier assist equalize-sensing; sequential program; virtual ground NOR flash memory; Buffer storage; Cellular phones; Computer buffers; Flash memory; Fluctuations; Indium tin oxide; Interference cancellation; Laboratories; Operational amplifiers; Voltage;
Conference_Titel :
VLSI Circuits, 2006. Digest of Technical Papers. 2006 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0006-6
DOI :
10.1109/VLSIC.2006.1705337
