Theoretical and Experimental Study of the Quenched-Domain Mode Gunn-Effect Oscillator

A general large-signal analysis of the quenched-domain mode of Gunn-effect devices has been developed which is applicable to any device without extensive device measurements. Some applications of such an analysis are demonstrated and others are being investigated. The phenomenological model includes such effects as domain formation, domain quenching, domain behavior in the presence of an RF voltage, displacement currents, the voltage dependence of domain width and others.