The Effect of Temperature on L S A Oscillations Between 26-40 GHz.

Investigations have been carried out on the effect of temperature upon L.S.A. oscillations, in the band 26 to 40 GHz. Measurements on n ⁺-n ⁺⁺-n-n ⁺ GaAs ´sandwich´ devices have been made over a range of ambient temperatures -50°C to +100°C. To avoid significant temperature gradients within the active ´n´ region the pulse length was chosen to be short compared with the thermal time constant of the device (about 1μs) and the mean input power was maintained at a low level. The results are interpreted with the aid of a computer analysis of the interaction between device and circuit. The simulation considers a realistic device with doping contacts and various random doping fluctuations and attempts to explain some of the essential elements of the experimental performance.