• DocumentCode
    2627966
  • Title

    Self-Repairing SRAM for Reducing Parametric Failures in Nanoscaled Memory

  • Author

    Mukhopadhyay, Saibal ; Kim, Keejong ; Mahmoodi, Hamid ; Datta, Animesh ; Park, Dongkyu ; Roy, Kaushik

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN
  • fYear
    0
  • fDate
    0-0 0
  • Firstpage
    132
  • Lastpage
    133
  • Abstract
    We present a self-repairing SRAM to reduce parametric failures using an on-chip leakage sensor and application of proper body bias. Simulations in a predictive 70nm technology show 5-40% (depending on inter-die Vt variation) improvement in SRAM yield. A test-chip is fabricated and measured in 0.13 mum CMOS to demonstrate operation of the self-repair system
  • Keywords
    CMOS memory circuits; SRAM chips; integrated circuit yield; nanotechnology; sensors; 0.13 micron; 70 nm; CMOS; body bias; nanoscaled memory; on-chip leakage sensor; parametric failures; self-repairing SRAM; Automatic testing; CMOS technology; Circuits; Leak detection; Mirrors; Monitoring; Predictive models; Random access memory; Sensor arrays; System testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Circuits, 2006. Digest of Technical Papers. 2006 Symposium on
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    1-4244-0006-6
  • Type

    conf

  • DOI
    10.1109/VLSIC.2006.1705345
  • Filename
    1705345
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2627966