Characteristics of Pd-poly crystalline 3C-SiC Schottky diodes for high temperature H2 microsensors

In this paper, poly 3C-SiC thin films were grown on SiO₂/Si by atmospheric pressure chemical vapor deposition (APCVD) using HMDS, H₂, and Ar gas at 1100 for 30 min, respectively. And then, palladium films were deposited on poly 3C-SiC by RF magnetron sputter. Thickness, uniformity, and quality of these samples were performed by SEM. Crystallinity and orientationation of palladium were analyzed by XRD. Pd/poly 3C-SiC Schottky diodes were fabricated and characterized by current-voltage measurements. From results, Pd/poly 3C-SiC devices are promising for high temperature hydrogen sensor and application.