Title :
The SnO2-Ga2O3-Sb2O5 laser ablated composite films for gas sensing: Structural and electrophysical studies
Author :
Demin, Ivan E. ; Kozlov, A.G.
Author_Institution :
Omsk State Univ., Omsk, Russia
Abstract :
The SnO2-Ga2O3-Sb2O5 composite films for gas sensing have been prepared via PLD (Pulsed laser deposition). A novel approach of composite films creation via the PLD has been proposed. Structural and electrophysical studies were performed. Films showed polycrystalline structure with homogenous distribution of tin, gallium, antimony and oxygen. The content of tin increases and gallium content in the film decreases with increasing laser energy density. Dependence of the conductivity of the films on temperature in the temperature range 20-390 °C was investigated. Anomalous decrease of conductivity with temperature was shown. Two activation energies for donor sites in tin oxide were calculated: 174 meV for second ionization of oxygen vacancies; 72 meV for ionization of Sb dopant. The response of films to 5 ppm of ethanol is shown to be 1.3-1.4 at temperatures above 300 °C.
Keywords :
antimony compounds; composite materials; gallium compounds; gas sensors; polymer films; pulsed laser deposition; semiconductor thin films; solid lasers; tin compounds; vacancies (crystal); PLD; SnO2-Ga2O3-Sb2O5; activation energy; electron volt energy 174 meV; electron volt energy 72 mueV; electrophysical study; film conductivity dependence; gas sensing; laser ablated composite films; laser energy density; oxygen vacancy ionization; polycrystalline structure; pulsed laser deposition; structural study; temperature 20 degC to 390 degC; Conductivity; Films; Gallium; Gas detectors; Temperature dependence; Tin; Gas sensors; pulsed laser deposition; semiconductor oxides; tin dioxide;
Conference_Titel :
Control and Communications (SIBCON), 2013 International Siberian Conference on
Conference_Location :
Krasnoyarsk
Print_ISBN :
978-1-4799-1060-1
DOI :
10.1109/SIBCON.2013.6693604
