DocumentCode :
2628644
Title :
Thermal techniques to improve ZnO-based FBAR devices characteristics
Author :
Linh Mai ; Ngoc-Hung Do ; Tuan-Anh Hoang ; Van-Su Tran ; Lan-Phuong Bui Pham ; Thanh-Thao Nguyen Thi ; Hung Ngoc Le
Author_Institution :
Sch. of Electr. Eng., Int. Univ., Ho Chi Minh City, Vietnam
fYear :
2009
fDate :
12-14 Oct. 2009
Firstpage :
183
Lastpage :
186
Abstract :
The paper presents some methods to improve characteristics of film bulk acoustic resonator (FBAR) devices. The FBAR devices were fabricated on Bragg reflectors. Thermal treatments were done by sintering and/or annealing processes. The measurement showed a considerable improvement of return loss (S11) and quality factor (Qs/p). These thermal treatment techniques seem very promising for enhancing FBAR resonance performance.
Keywords :
acoustic resonators; bulk acoustic wave devices; thin films; zinc compounds; Bragg reflectors; FBAR device characteristics; FBAR resonance performance; ZnO; annealing process; film bulk acoustic resonator devices; quality factor; return loss; sintering process; thermal treatment techniques; Annealing; Argon; Electrodes; Film bulk acoustic resonators; Piezoelectric films; Radio frequency; Resonance; Silicon; Temperature; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Technologies for Communications, 2009. ATC '09. International Conference on
Conference_Location :
Hai Phong
Print_ISBN :
978-1-4244-5139-5
Type :
conf
DOI :
10.1109/ATC.2009.5349577
Filename :
5349577
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2628644
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