Title :
An 11-Band 3.4 to 10.3 GHz MB-OFDM UWB Receiver in 0.25/spl mu/m SiGe BiCMOS
Author :
Valdes-Garcia, Alberto ; Mishra, Chinmaya ; Bahmani, Faramarz ; Silva-Martinez, Jose ; Sánchez-Sinencio, Edgar
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas A&M Univ., College Station, TX
Abstract :
An 11-band 3.4-10.3GHz direct conversion receiver for MB-OFDM UWB is implemented in a 0.25mum BiCMOS process. It includes an RF front-end with interference rejection at 5.25GHz, a frequency synthesizer generating 11 carrier tones in quadrature with fast hopping, and a linear phase baseband section with 42dB of gain programmability. The packaged IC mounted on FR-4 substrate provides maximum gain of 67-78dB and NF of 5-10dB across all bands while consuming 114mA from a 2.5V supply
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; OFDM modulation; frequency synthesizers; microwave receivers; radio receivers; ultra wideband communication; 0.25 micron; 114 mA; 2.25 GHz; 2.5 V; 3.4 to 10.3 GHz; 42 dB; 5 to 10 dB; 67 to 78 dB; BiCMOS process; MB-OFDM UWB receiver; RF front end; SiGe; direct conversion receiver; frequency synthesizer; gain programmability; interference rejection; linear phase baseband section; wireless receiver; Baseband; BiCMOS integrated circuits; Bonding; Circuit optimization; Circuit testing; Filters; Germanium silicon alloys; Radio frequency; Silicon germanium; Wideband;
Conference_Titel :
VLSI Circuits, 2006. Digest of Technical Papers. 2006 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0006-6
DOI :
10.1109/VLSIC.2006.1705382
