Title :
Integrated Parametric Amplifiers with IMPATT-diode Pumping
Author :
Bura, P. ; Pan, W.Y. ; Yuan, S.
Abstract :
Hybrid integrated parametric amplifiers (paramps) have been developed for different S-Band frequencies. The amplifier circuits were etched on a 1 in. x 1 in. copper-on-alumina substrate. Voltage gain-bandwidth products of 800 MHz and noise figures as low as 1.2 dB were measured. An IMPATT-Diode oscillator was used as the pump source. The paramp noise problem due to the IMPATT oscillator was determined and remedied.
Keywords :
Bandwidth; Circuits; Cutoff frequency; Dielectric measurements; Dielectric substrates; Etching; Microwave oscillators; Noise figure; Varactors; Voltage;
Conference_Titel :
Microwave Symposium, 1969 G-MTT International
Conference_Location :
Dallas TX, USA
DOI :
10.1109/GMTT.1969.1122732
