Title :
Electrical properties of halogen-doped CdTe epitaxial films on Si substrates grown by MOVPE
Author :
Niraula, M. ; Yasuda, K. ; Watanabe, A. ; Kai, Y. ; Ichihashi, H. ; Yamada, W. ; Oka, H. ; Matsumoto, K. ; Yoneyama, T. ; Nakanishi, T. ; Katoh, D. ; Nakashima, H. ; Agata, Y.
Author_Institution :
Graduate School of Engineering, Nagoya Institute of Technology, Gokiso, Showa, 466-8555, Japan
Abstract :
We studied the effect of halogen doping of CdTe films on Si substrates grown by MOVPE at different growth conditions. High resistivity film was obtained by adjusting the growth temperature, Te/Cd precursor flow ratio and the dopant flow-rate. The result shows resistivity of the film does not change linearly with the dopant flow-rate, but increases abruptly when the dopant flow-rate is increased beyond certain point. Photoluminescence measurement also confirmed dopant incorporation in the crystal. We explained the result of resistivity change due to the compensation of excess shallow acceptors by deep intrinsic donors.
Keywords :
Conductivity; Crystals; Doping; Epitaxial growth; Epitaxial layers; Gamma ray detection; Gamma ray detectors; Semiconductor films; Substrates; Temperature; CdTe thick films; Gamma detector; MOVPE; halogen-doping; high-resitivity;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2008. NSS '08. IEEE
Conference_Location :
Dresden, Germany
Print_ISBN :
978-1-4244-2714-7
Electronic_ISBN :
1095-7863
DOI :
10.1109/NSSMIC.2008.4775139
