DocumentCode
2629037
Title
Physical degradation of GaN HEMT device observed in TEM during reliability test
Author
Park, S.Y. ; Floresca, Carlo ; Kim, Moon.J. ; Chowdhury, Uttiya ; Jimenes, Jose L. ; Lee, Cathy ; Beam, Edward ; Sunier, Paul ; Balistreri, Tony
Author_Institution
University of Texas at Dallas, Richardson, TX 75080
fYear
2008
fDate
12-12 Oct. 2008
Firstpage
45
Lastpage
54
Abstract
HRTEM observation was conducted to find evidence of physical degradation in AlGaN/GaN heterostructure HEMT devices after life time testing. A strong relationship between electrical degradation and defects formation near the gate edge was observed. Detailed features of physical damages correlated with the degradation mechanism were discussed.
Keywords
Aluminum gallium nitride; Capacitive sensors; Gallium nitride; Gold; HEMTs; Life testing; Stress; Temperature; Thermal conductivity; Thermal degradation; AlGaN/GaN, HEMT, reliability and degradation;
fLanguage
English
Publisher
ieee
Conference_Titel
ROCS Workshop, 2008 [Reliability of Compound Semiconductors Workshop]
Conference_Location
Monterey, CA, USA
Print_ISBN
0-7908-0120-5
Type
conf
DOI
10.1109/ROCS.2008.5483616
Filename
5483616
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