Title :
Physical degradation of GaN HEMT device observed in TEM during reliability test
Author :
Park, S.Y. ; Floresca, Carlo ; Kim, Moon.J. ; Chowdhury, Uttiya ; Jimenes, Jose L. ; Lee, Cathy ; Beam, Edward ; Sunier, Paul ; Balistreri, Tony
Author_Institution :
University of Texas at Dallas, Richardson, TX 75080
Abstract :
HRTEM observation was conducted to find evidence of physical degradation in AlGaN/GaN heterostructure HEMT devices after life time testing. A strong relationship between electrical degradation and defects formation near the gate edge was observed. Detailed features of physical damages correlated with the degradation mechanism were discussed.
Keywords :
Aluminum gallium nitride; Capacitive sensors; Gallium nitride; Gold; HEMTs; Life testing; Stress; Temperature; Thermal conductivity; Thermal degradation; AlGaN/GaN, HEMT, reliability and degradation;
Conference_Titel :
ROCS Workshop, 2008 [Reliability of Compound Semiconductors Workshop]
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7908-0120-5
DOI :
10.1109/ROCS.2008.5483616
