Title :
2.4GHz WLAN D-pHEMT LNA
Author :
Qian, Zhang ; Wenyuan, Li ; Zhigong, Wang ; Cheng, Qian ; Xichang, Zhang
Author_Institution :
Inst. of RF-& OE-Ics, Southeast Univ., Nanjing, China
Abstract :
An integrated narrowband low noise amplifier in cascode topology has been developed for WLAN applications. Using WIN´s 0.15µm pHEMT technology, the impedance matching, voltage gain, noise figure and 1dB compression point of the circuit are analyzed and optimized under specified power consumption. Results from the simulation under advanced design system(ADS) software and momentum show that the maximum forward gain of the circuit is 20 dB, noise figure is 0.93 dB, OP1dB is 10 dBm at the center frequency of 2.4 GHz, while comsuming 42 mA current from a 3.3 V power supply.
Keywords :
high electron mobility transistors; low noise amplifiers; wireless LAN; D-pHEMT; WLAN; advanced design system; cascode topology; current 42 mA; frequency 2.4 GHz; gain 20 dB; impedance matching; integrated narrowband low noise amplifier; maximum forward gain; noise figure 0.93 dB; voltage 3.3 V; wavelength 0.15 mum; Application software; Circuit topology; Impedance matching; Integrated circuit technology; Low-noise amplifiers; Narrowband; Noise figure; PHEMTs; Voltage; Wireless LAN; D-pHEMT; LNA; noise figure;
Conference_Titel :
Advanced Technologies for Communications, 2009. ATC '09. International Conference on
Conference_Location :
Hai Phong
Print_ISBN :
978-1-4244-5139-5
DOI :
10.1109/ATC.2009.5349601
