DocumentCode :
2629809
Title :
Dead-time minimisation using active voltage control gate drive for high-power IGBT converters
Author :
Palmer, P.R. ; Yang, Xin ; He, Weiwei
Author_Institution :
Dept. of Eng., Univ. of Cambridge, Cambridge, UK
fYear :
2012
fDate :
25-28 Oct. 2012
Firstpage :
333
Lastpage :
338
Abstract :
High-power converters usually need longer dead-times than their lower-power counterparts and a lower switching frequency. Also due to the complicated assembly layout and severe variations in parasitics, in practice the conventional dead-time specific adjustment or compensation for high-power converters is less effective, and usually this process is time-consuming and bespoke. For general applications, minimising or eliminating dead-time in the gate drive technology is a desirable solution. With the growing acceptance of power electronics building blocks (PEBB) and intelligent power modules (IPM), gate drives with intelligent functions are in demand. Smart functions including dead time elimination/minimisation can improve modularity, flexibility and reliability. In this paper, a dead-time minimisation using Active Voltage Control (AVC) gate drive is presented.
Keywords :
compensation; insulated gate bipolar transistors; minimisation; power convertors; power electronics; voltage control; AVC gate drive; IPM; PEBB; active voltage control gate drive; compensation; complicated assembly layout; conventional dead-time specific adjustment; dead time elimination; dead-time minimisation; gate drive technology; gate drives; high-power IGBT converters; intelligent functions; intelligent power modules; power electronics building blocks; smart functions; switching frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IECON 2012 - 38th Annual Conference on IEEE Industrial Electronics Society
Conference_Location :
Montreal, QC
ISSN :
1553-572X
Print_ISBN :
978-1-4673-2419-9
Electronic_ISBN :
1553-572X
Type :
conf
DOI :
10.1109/IECON.2012.6388624
Filename :
6388624
Link To Document :
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