Title :
Transient spectral hole burning spectroscopy of exciton spin flip processes in In(Ga)As quantum dots
Author :
Müller, T. ; Strasser, G. ; Unterrainer, K.
Author_Institution :
Inst. of Photonics & Center for Micro- & Nanostructures, Technical Univ. Vienna, Austria
Abstract :
Transient spectral hole burning measurements are performed on InAs/GaAs self-assembled quantum dots. In the case of cross-polarized pump and probe pulses, a spectral "antihole" emerges due to relaxation of the exciton spin.
Keywords :
III-V semiconductors; excitons; gallium arsenide; high-speed optical techniques; indium compounds; optical hole burning; relaxation; self-assembly; semiconductor quantum dots; In(Ga)As quantum dots; InAs-GaAs; exciton spin flip; exciton spin relaxation; self-assembly; spectral antihole; transient spectral hole burning spectroscopy; Energy measurement; Excitons; Performance evaluation; Polarization; Probes; Pulse measurements; Pulse shaping methods; Quantum dots; Spectroscopy; Stationary state;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1547866
