Title :
The Theoretical Model and Simulation of Resonant Sensors
Author :
Weiwei, Xing ; Du Yan ; Shangchun, Fan
Author_Institution :
Beihang Univ. of Instrum. Sci. & Optoelectron Eng., Beijing, China
Abstract :
The resonator simulator provides a new method for researching the resonant sensor closed-loop circuit. In this paper, the mathematic model of silicon pressure resonator is established to design the circuit with resonator characteristic. Firstly the relation between pressure and the amplitude-frequency characteristic of the resonant beam is deduced. Secondly, combined with the in-out of excitation and pick-up, a complete mathematic model of resonator characteristic is given. Then typical experimental data fitting is made to provide particular parameters for the simulator. Finally a method for the circuit of design is provided.
Keywords :
curve fitting; pressure sensors; resonators; Si; amplitude-frequency characteristic; pressure resonator; resonant beam; resonant sensor closed-loop circuit simulation; theoretical model; Fitting; Integrated circuit modeling; Resistors; Resonant frequency; Sensor phenomena and characterization; Silicon; curve fitting; pressure sensor; resonant; theoretical model;
Conference_Titel :
Measuring Technology and Mechatronics Automation (ICMTMA), 2011 Third International Conference on
Conference_Location :
Shangshai
Print_ISBN :
978-1-4244-9010-3
DOI :
10.1109/ICMTMA.2011.817
