DocumentCode :
2630520
Title :
High Efficiency Solid State Microwave Amplifier Using TRAPATT Diodes
Author :
Hess, R.J. ; Floyd, D.A.
fYear :
1970
fDate :
11-14 May 1970
Firstpage :
291
Lastpage :
294
Abstract :
Silicon IMP ATT diodes have been used in a reflectance amplifier circuit to achieve a DC to RF conversion efficiency of 50 percent at S-band with 8 to 10 dB gain and 10 watts peak output. The RF circuit used was a four slug coaxial structure similar to that used by others in the production of high efficiency oscillations. A pulse width of one microsecond at a repetition rate of 5 KHz was used. The circuit configuration of the reflectance amplifier is shown in Figure 1.
Keywords :
Coaxial components; Diodes; Gain; Microwave amplifiers; Pulse amplifiers; Radio frequency; Radiofrequency amplifiers; Reflectivity; Silicon; Solid state circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium, G-MTT 1970 International
Conference_Location :
Newport Beach, CA, USA
Type :
conf
DOI :
10.1109/GMTT.1970.1122828
Filename :
1122828
Link To Document :
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