DocumentCode
2630520
Title
High Efficiency Solid State Microwave Amplifier Using TRAPATT Diodes
Author
Hess, R.J. ; Floyd, D.A.
fYear
1970
fDate
11-14 May 1970
Firstpage
291
Lastpage
294
Abstract
Silicon IMP ATT diodes have been used in a reflectance amplifier circuit to achieve a DC to RF conversion efficiency of 50 percent at S-band with 8 to 10 dB gain and 10 watts peak output. The RF circuit used was a four slug coaxial structure similar to that used by others in the production of high efficiency oscillations. A pulse width of one microsecond at a repetition rate of 5 KHz was used. The circuit configuration of the reflectance amplifier is shown in Figure 1.
Keywords
Coaxial components; Diodes; Gain; Microwave amplifiers; Pulse amplifiers; Radio frequency; Radiofrequency amplifiers; Reflectivity; Silicon; Solid state circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium, G-MTT 1970 International
Conference_Location
Newport Beach, CA, USA
Type
conf
DOI
10.1109/GMTT.1970.1122828
Filename
1122828
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