High Efficiency Solid State Microwave Amplifier Using TRAPATT Diodes

Silicon IMP ATT diodes have been used in a reflectance amplifier circuit to achieve a DC to RF conversion efficiency of 50 percent at S-band with 8 to 10 dB gain and 10 watts peak output. The RF circuit used was a four slug coaxial structure similar to that used by others in the production of high efficiency oscillations. A pulse width of one microsecond at a repetition rate of 5 KHz was used. The circuit configuration of the reflectance amplifier is shown in Figure 1.