Title :
Field stop shorted anode trench IGBT for induction heating appliances
Author :
Yeon, Jae-Eul ; Park, Min-Young ; Cho, Kyu-Min ; Kim, Hee-Jun
Author_Institution :
HVPCIA, Consumer Power Syst. Team, Fairchild Semicond., South Korea
Abstract :
This paper introduces a newly developed field stop shorted anode trench IGBT with intrinsic body diode like power MOSFETs, and presents its effectiveness for the single ended resonant inverter in induction heating applications. Although the new device combines both IGBT and body diode functions, it can provide better performances by means of an advanced field stop trench IGBT technology. The effectiveness of the new device is validated in an experiment using 1.8kW single-ended induction heating resonant inverter.
Keywords :
domestic appliances; induction heating; insulated gate bipolar transistors; power MOSFET; resonant invertors; field stop shorted anode trench IGBT; induction heating appliance; intrinsic body diode; power 1.8 kW; power MOSFET; single ended resonant inverter; Heating; Insulated gate bipolar transistors; High voltage Field Stop IGBT; Induction Heating; Shorted Anode;
Conference_Titel :
IECON 2012 - 38th Annual Conference on IEEE Industrial Electronics Society
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4673-2419-9
Electronic_ISBN :
1553-572X
DOI :
10.1109/IECON.2012.6388674
