Title :
Effects of strain and barrier height of thin interlayer on InAs quantum dots grown on GaInAsP/InP (100) by metalorganic chemical vapor deposition
Author :
Barik, S. ; Tan, H.H. ; Barik M ; Jagadish, C.
Author_Institution :
Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
Our theoretical model shows that strain and barrier height of the GaAs or InGaAs interlayer should be considered to explain the experimentally observed blue-shift in the photoluminescence of InAs quantum dots grown on GaInAsP/InP (100).
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum dots; spectral line shift; GaAs; GaInAsP-InP; InAs; InAs quantum dots; InGaAs; barrier height; blue-shift; interlayer strain; metalorganic chemical vapor deposition; photoluminescence; Buffer layers; Capacitive sensors; Chemical vapor deposition; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Quantum dot lasers; Quantum dots; Quantum mechanics; Substrates;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1547903
