High-speed GaAs MESFET digital IC design for optical communication systems

Author

Sano, Kimikazu ; Narahara, Koichi ; Murata, Koichi ; Otsuji, Taiichi ; Onodera, Kiyomitsu

Author_Institution

NTT Opt. Network Syst. Lab., Kanagawa, Japan

fYear

1998

fDate

10-13 Feb 1998

Firstpage

1

Lastpage

5

Abstract

This paper describes a high-speed GaAs MESFET digital IC design for optical communication systems. We propose novel circuit configurations of a selector and a static delayed flip-flop which are key elements to perform high-speed digital functions. Employing these new design, the selector IC and static decision IC fabricated with 0.12-μm GaAs MESFET operated up to 44 Gbit./s and 22 Gbit/s, respectively. These performances are record speed for GaAs MESFETs

Keywords

III-V semiconductors; Schottky gate field effect transistors; field effect digital integrated circuits; gallium arsenide; optical communication; 0.12 micron; 22 Gbit/s; 44 Gbit/s; circuit configurations; flip-flop; high-speed GaAs MESFET digital IC design; optical communication systems; Analog integrated circuits; Clocks; Digital integrated circuits; Frequency; Gallium arsenide; High speed integrated circuits; MESFET integrated circuits; Optical design; Optical fiber communication; Photonic integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Design Automation Conference 1998. Proceedings of the ASP-DAC '98. Asia and South Pacific

Conference_Location

Yokohama

Print_ISBN

0-7803-4425-1

Type

conf

DOI

10.1109/ASPDAC.1998.669389

Filename

669389