MEMS components with perfectly protected edges and corners in Si{110} wafers

Author

Pal, Parama ; Sato, Kazuo ; Hida, Hirotaka

Author_Institution

Dept. of Phys., Indian Inst. of Technol., Hyderabad, India

fYear

2011

fDate

6-9 Nov. 2011

Firstpage

55

Lastpage

59

Abstract

In this paper, we report a fabrication method for the formation of microelectromechanical systems (MEMS) structures with perfectly protected edges and corners in {110}Si wafers using complementary metal oxide semiconductor (CMOS) compatible tetramethyl-ammonium hydroxide (TMAH) solution. Fabrication method includes two-steps wet etching. The second step of etching is carried out after mask inversion from silicon nitride (Si₃N₄) to silicon dioxide (SiO₂) by local oxidation of silicon (LOCOS) followed by nitride etching. Mask design methodology for the various shapes microstructures whose edges aligned along different directions is briefly discussed.

Keywords

CMOS integrated circuits; crystal microstructure; elemental semiconductors; etching; masks; micromechanical devices; oxidation; silicon; MEMS component; Si; complementary metal oxide semiconductor; corner protection; edge protection; mask design methodology; mask inversion; microelectromechanical system fabrication method; shape microstructure; silicon dioxide; silicon nitride etching; silicon oxidation; tetramethyl ammonium hydroxide solution; wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro-NanoMechatronics and Human Science (MHS), 2011 International Symposium on

Conference_Location

Nagoya

ISSN

Pending

Print_ISBN

978-1-4577-1360-6

Type

conf

DOI

10.1109/MHS.2011.6102158

Filename

6102158