Title :
Design and experimental results of a 2V-operation single-chip GaAs T/R-MMIC front-end for 1.9-GHz personal communications
Author :
Yamamoto, Kazuya ; Moriwaki, Takao ; Yoshii, Yutaka ; Fujii, Takayuki ; Otsuji, Jun ; Sasaki, Yoshinobu ; Miyazaki, Yukio ; Nishitani, Kazuo
Author_Institution :
High Frequency & Opt. Semicond. Div., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
Design and experimental results of a 2-V operation single-chip GaAs T/R-MMIC front-end are described for 1.9-GHz personal communication terminals. This chip, fabricated with planar self-aligned gate FET process useful for low-cost and high-volume production, integrates RF front-end analog circuits-a power amplifier, a T/R-switch, and a low-noise amplifier. Additionally integrated are a newly designed voltage doubler-negative voltage generator (VDNVG) and a control logic circuit to control transmit and receive functions. The chip is capable of delivering 21-dBm output power at 39 % efficiency with 2-V single power supply in transmit mode. By utilizing up-voltage and negative voltages generated from the generator, the new interface circuit enables the switch to handle high power outputs over 24 dBm with 0.55-dB insertion loss
Keywords :
III-V semiconductors; MMIC power amplifiers; gallium arsenide; personal communication networks; telecommunication terminals; 1.9 GHz; 1.9-GHz personal communications; 2 V; 2V-operation single-chip GaAs T/R-MMIC front-end; T/R-switch; control logic circuit; low-noise amplifier; planar self-aligned gate FET process; power amplifier; voltage doubler-negative voltage generator; Circuits; Communication system control; FETs; Gallium arsenide; Low-noise amplifiers; Power generation; Production; Radio frequency; Switches; Voltage control;
Conference_Titel :
Design Automation Conference 1998. Proceedings of the ASP-DAC '98. Asia and South Pacific
Conference_Location :
Yokohama
Print_ISBN :
0-7803-4425-1
DOI :
10.1109/ASPDAC.1998.669390
