Title :
Digital output MEMS pressure sensor using capacitance-to-time converter
Author :
Montiel-Nelson, J.A. ; Sosa, J. ; Pulido, R. ; Beriain, A. ; Solar, H. ; Berenguer, R.
Author_Institution :
IUMA & DIEA, Univ. of Las Palmas de G.C., Las Palmas de Gran Canaria, Spain
Abstract :
In this paper, a MEMS capacitive pressure sensor and a capacitance to digital converter are presented. The MEMS transducer has been designed and fabricated using MetalMUMPs process from MEMSCAP. For an diaphragm area of 600×600 μm2 and an electrostatic pressure variation up to 30 kPa, the MEMS exhibits a capacitance change from 9.3 pF to 13.4 pF, with a INL of 0.2% A capacitance to digital converter has been designed and fabricated in a low cost 2P4M 0.35μm CMOS standard process as a digital interface to the MEMS sensor. The measured resolution of 7.9 bit and power consumption of 16.56 μW demonstrate that by combining both devices a long range passive RFID sensor for pressure measurements up to 30 kPa is achieved.
Keywords :
CMOS digital integrated circuits; capacitance measurement; capacitive sensors; diaphragms; integrated circuit design; microfabrication; microsensors; pressure measurement; pressure sensors; pressure transducers; radiofrequency identification; MEMS transducer; MEMSCAP; MetalMUMP process; capacitance 9.3 pF to 13.4 pF; capacitance to digital converter; capacitance-to-time converter; diaphragm; digital output MEMS capacitive pressure sensor; electrostatic pressure variation; long range passive RFID sensor; low cost 2P4M CMOS standard process; power 16.56 muW; pressure measurement; size 0.35 mum; word length 7.9 bit; Capacitance; Electrostatics; Micromechanical devices; Oscillators; Pressure measurement; Radiofrequency identification; Transducers; CMOS; MEMS; RFID; low-power sensor; pressure sensor;
Conference_Titel :
Design of Circuits and Integrated Circuits (DCIS), 2014 Conference on
Conference_Location :
Madrid
DOI :
10.1109/DCIS.2014.7035565
