Title :
High-Power Microwave Amplifier Using Anti-Parallel Avalanche-Diode Pair
Abstract :
A new microstrip-circuit amplifier is composed of two high-efficiency avalanche diodes placed in anti-parallel fashion, one-half wave-length apart in a transmission line. The amplifier provides a 200 W output power with a 10 dB gain.
Keywords :
Bismuth; Circuit optimization; Diodes; High power amplifiers; Microstrip; Microwave amplifiers; Power harmonic filters; Power transmission lines; Pulse amplifiers; Tuning;
Conference_Titel :
Microwave Symposium Digest, 1971 IEEE GMTT International
Conference_Location :
Washington, DC, USA
DOI :
10.1109/GMTT.1971.1122915
