Title :
Quantum-confined Stark effect electroabsorption in Ge/SiGe quantum wells on silicon substrates
Author :
Kuo, Yu-Hsuan ; Lee, Yongkyu ; Ren, Shen ; Ge, Yangsi ; Miller, David A B ; Harris, James S.
Author_Institution :
Stanford Univ., CA, USA
Abstract :
We observe strong electroabsorption in Ge quantum wells with SiGe barriers, grown on Si substrates, with performance comparable to III-V materials, and promising compact, low-power, high-speed modulators compatible with Si CMOS electronics.
Keywords :
Ge-Si alloys; electroabsorption; elemental semiconductors; germanium; integrated optoelectronics; quantum confined Stark effect; semiconductor quantum wells; Ge-SiGe; Ge/SiGe quantum wells; III-V materials; Si; Si CMOS electronics; SiGe barriers; compact modulators; electroabsorption; high-speed modulators; low-power modulators; quantum-confined Stark effect; silicon substrates; Absorption; Germanium silicon alloys; III-V semiconductor materials; Optical buffering; Optical modulation; Optical resonators; Optical waveguides; Silicon germanium; Stark effect; Substrates;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1547990
